2N1613
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SILICON
NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1613 is a silicon
NPN epitaxial planar transistor designed for small signal
general purpose switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Emitter-Base Voltage
Continuous Collector Current
VEBO
IC
Power Dissipation (TC=25°C)
Power Dissipation
Operating and Storage Junction Temperature
75
UNITS
V
50
V
7.0
V
500
mA
PD
PD
3.0
W
0.8
W
TJ, Tstg
-65 to +200
°C
MAX
10
UNITS
nA
10
nA
ELECTRICAL
SYMBOL
ICBO
IEBO
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=60V
VEB=5.0V
BVCBO
IC=100μA
75
V
BVCER
IC=10mA, RBE=10Ω
IE=100μA
50
V
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
7.0
IC=150mA, IB=15mA
IC=150mA, IB=15mA
VCE=10V, IC=100μA
VCE=10V, IC=10mA
20
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=20MHz
40
V
1.5
V
1.3
V
35
120
20
60
MHz
25
pF
Cib
VCB=10V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
80
pF
NF
VCE=10V, IC=300μA, f=1.0kHz
12
dB
R1 (23-April 2013)
2N1613
SILICON
NPN TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (23-April 2013)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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